Author Affiliations
Abstract
1 Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
2 University of Chinese Academy of Sciences, Beijing 100049, China
3 Zhongtian Technology Group Co. Ltd, Nantong 226009, China
4 School of Opto-Electronic Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
We investigate a novel GaAs-based laser power converters (LPCs) grown by metal-organic chemical vapor deposition (MOCVD), which uses a single monolithic structure with six junctions connected by tunnel junctions to obtain a high output voltage. The LPCs with diameters of active aperture of 2 mm and 4 mm were fabricated and tested. The test results show that under an 808 nm laser, two LPCs both show an open circuit voltage of above 6.5 V. A maximum power conversion efficiency of 50.2% is obtained by 2 mm sample with laser power of 0.256 W, and an output electric power of 1.9 W with laser power of 4.85 W is obtained by 4 mm sample. The performances of the LPCs are deteriorated under illumination of high flux, and the 4 mm sample shows a higher laser power tolerance.
光电子快报(英文版)
2017, 13(1): 21